| BQ4017Y Description |
| 2048Kx8 Nonvolatile SRAM, 10% Voltage Tolerance |
| BQ4017Y Vendor |
| Texas Instruments |
| BQ4017Y Categories |
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| BQ4017Y Features |
- Data retention in the absence of power
- Automatic write-protection during power-up/power-down cycles
- Conventional SRAM operation; unlimited write cycles
- 5-year minimum data retention in absence of power
- Battery internally isolated until power is applied
|
| BQ4017Y Datasheet and Application Notes |
|
| Parameter | Value |
| Supply Voltage (V) | 5 |
| Memory Density (Kb) | 16384 |
| Pin/Package | 36DIP MODULE |
| Approx. 1KU Price (US$) | 50 |
| Products related to BQ4017Y |
| BQ4017MC-70 BQ4017YMC-70 BQ4017 |