CA3127E Datasheet

• Gain Bandwidth Product (f_T) >1GHz
• Power Gain 30dB (Typ) at 100MHz
• Noise Figure 3.5dB (Typ) at 100MHz
• Five Independent Transistors on a Common Substrate
• Pb-Free Plus Anneal Available (RoHS Compliant)

The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of f_T in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors.